Theoretical and Experimental Analysis of a CSWPL Behavioral Model for Microwave GaN Transistors Including DC Bias Voltages

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach

A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function

Active Balun Design for Next-Generation Telecom Satellite Frequency Converters

A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)

Harmonic Included CSWPL Model for Broadband PA Design Based on GaN HEMTs

A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation

Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers

Equivalent-circuit extraction for gallium nitride electron devices: Direct versus optimization-empowered approaches

Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection

An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

2-mm-gate-periphery GaN high electron mobility transistors on SiC and Si substrates: A comparative analysis from a small-signal standpoint

A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

Scalability of Multifinger HEMT Performance

An ultra-wideband sensing board for radio frequency front-end in IoT transmitters

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Nonlinear-embedding design methodology oriented to LDMOS power amplifiers

A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology

High-periphery GaN HEMT modeling up to 65 GHz and 200 °C

Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems